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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Darlington Complementary Silicon Power Transistors
. . . designed for general-purpose amplifier and low frequency switching applications. * High DC Current Gain -- hFE = 3500 (Typ) @ IC = 5.0 Adc * Collector-Emitter Sustaining Voltage -- @ 100 mA VCEO(sus) = 80 Vdc (Min) -- 2N6058 VCEO(sus) = 100 Vdc (Min) -- 2N6052, 2N6059 * Monolithic Construction with Built-In Base-Emitter Shunt Resistors
2N6052* 2N6058 * 2N6059
*Motorola Preferred Device
PNP
NPN
PD, POWER DISSIPATION (WATTS)
II II IIIIIIIIIIIIIIIIIIIIIII II II I I I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII II I I II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II III I I II II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II III I I II II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIII IIII I I I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII
MAXIMUM RATINGS (1)
Rating Symbol VCEO VCB VEB IC IB 2N6058 80 80 2N6052 2N6059 100 100 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base voltage 5.0 12 20 Collector Current -- Continuous Peak Base Current 0.2 Total Device Dissipation @TC = 25_C Derate above 25_C PD 150 Watts W/_C 0.857 Operating and Storage Junction Temperature Range TJ, Tstg - 65 to + 200_C
DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 - 100 VOLTS 150 WATTS
_C
CASE 1-07 TO-204AA (TO-3)
THERMAL CHARACTERISTICS
Characteristic
Symbol RJC
Rating 1.17
Unit
Thermal Resistance, Junction to Case
_C/W
(1) Indicates JEDEC Registered Data.
160 140 120 100 80 60 40 20 0
0
25
50 75 100 125 150 TC, CASE TEMPERATURE (C)
175
200
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
(c) Motorola, Inc. 1998 Motorola Bipolar Power Transistor Device Data
1
2N6052
t, TIME ( s)
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I III II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIII I I III II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Collector-Emitter Sustaining Voltage (1) (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) VCEO(sus) Vdc 2N6058 2N6052, 2N6059 80 100 -- -- -- -- -- -- ICEO mAdc 2N6058 2N6052, 2N6059 1.0 1.0 0.5 5.0 2.0 Collector Cutoff Current (VCE = Rated VCEO, VBE(off) = 1.5 Vdc) (VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 150_C) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ICEX mAdc IEBO mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 6.0 Adc, VCE = 3.0 Vdc) (IC = 12 Adc, VCE = 3.0 Vdc) hFE -- 750 100 -- -- -- -- 18,000 -- 2.0 3.0 4.0 2.8 Collector-Emitter Saturation Voltage (IC = 6.0 Adc, IB = 24 mAdc) (IC = 12 Adc, IB = 120 mAdc) Base-Emitter Saturation Voltage (IC = 12 Adc, IB = 120 mAdc) Base-Emitter On Voltage (IC = 6.0 Adc, VCE = 3.0 Vdc) VCE(sat) Vdc VBE(sat) VBE(on) Vdc Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short Circuit Forward Current Transfer Ratio (IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) |hfe| 4.0 -- MHz 2N6052 2N6058/2N6059 Cob hfe -- -- 500 300 -- pF -- Small-Signal Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) 300 * Indicates JEDEC Registered Data. (1) Pulse test: Pulse Width = 300 s, Duty Cycle = 2.0%.
CC RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS - 30 V D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 mA RC SCOPE MSD6100 USED BELOW IB 100 mA TUT V2 approx + 8.0 V 0 V1 approx - 8.0 V tr, tf 10 ns DUTY CYCLE = 1.0% 51 RB D1 + 4.0 V 25 s
for td and tr, D1 is disconnected and V2 = 0
V
10 5.0 ts 2.0 tf 1.0 0.5 tr td @ VBE(off) = 0 0.2 0.1 0.2 VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 10 20 2N6052 2N6059
5.0 k
50
0.5
For NPN test circuit reverse diode and voltage polarities.
1.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP)
Figure 2. Switching Times Test Circuit
Figure 3. Switching Times
2
Motorola Bipolar Power Transistor Device Data
2N6052
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.01 SINGLE PULSE 0.05 0.02 0.01 P(pk) RJC(t) = r(t) RJC RJC = 1.17C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) JC(t) DUTY CYCLE, D = t1/t2 D = 0.5 0.2
0.02
0.03 0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0 t, TIME (ms)
10
20
30
50
100
200 300
500
1000
Figure 4. Thermal Response
ACTIVE-REGION SAFE OPERATING AREA
50 0.1 ms IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) 20 10 5.0 2.0 1.0 0.5
SECOND BREAKDOWN LIMITED
50 20 10 5.0 2.0 1.0 0.5
SECOND BREAKDOWN LIMITED
0.1 ms
0.5 ms 1.0 ms 5.0 ms TJ = 200C
0.5 ms 1.0 ms 5.0 ms TJ = 200C
0.2 0.1 0.05 10
BONDING WIRE LIMITED THERMAL LIMITATION @TC = 25C (SINGLE PULSE)
dc
0.2 0.1
BONDING WIRE LIMITED THERMAL LIMITATION @TC = 25C (SINGLE PULSE)
dc
20 30 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
0.05
10
20
30
50
70
100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. 2N6058
Figure 6. 2N6052, 2N6059
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 5, 6 and 7 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 200_C; TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
v
hfe, SMALL-SIGNAL CURRENT GAIN
3000 2000 1000 500
500 TC = 25C VCE = 3.0 V IC = 5.0 A TJ = 25C 300 C, CAPACITANCE (pF) 200 Cib Cob 100 70 50 0.1 2N6052 2N6058/2N6059 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100
200 100 50 30 1.0 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 2N6052 2N6058/2N6059
Figure 7. Small-Signal Current Gain Motorola Bipolar Power Transistor Device Data
Figure 8. Capacitance 3
2N6052
PNP 2N6052
20,000 VCE = 3.0 V 10,000 hFE , DC CURRENT GAIN TJ = 150C 5000 3000 2000 1000 500 300 200 0.2 0.3 - 55C 25C 40,000 20,000 hFE , DC CURRENT GAIN 10,000 6,000 4,000 2,000 1,000 600 400 0.2 0.3 - 55C 25C TJ = 150C VCE = 3.0 V
NPN 2N6058, 2N6059
0.5
5.0 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP)
10
20
0.5
1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP)
10
20
Figure 9. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
3.0
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TJ = 25C
3.0
TJ = 25C 6.0 A 9.0 A 12 A
2.6 IC = 3.0 A 2.2 6.0 A 9.0 A 12 A
2.6 IC = 3.0 A 2.2
1.8
1.8
1.4
1.4
1.0 0.5
1.0
2.0 3.0 10 5.0 IB, BASE CURRENT (mA)
20 30
50
1.0 0.5
1.0
2.0 3.0 5.0 10 IB, BASE CURRENT (mA)
20 30
50
Figure 10. Collector Saturation Region
3.0 TJ = 25C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS)
3.0 TJ = 25C 2.5
2.0 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 0.5 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20
2.0 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 0.5 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20
1.5
1.5
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 11. "On" Voltages
4
Motorola Bipolar Power Transistor Device Data
2N6052
PACKAGE DIMENSIONS
A N C -T- E D U V
2 2 PL SEATING PLANE
K
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY.
0.13 (0.005) L G
1
TQ
M
Y
M
-Y-
H
B
-Q- 0.13 (0.005)
M
TY
M
DIM A B C D E G H K L N Q U V
INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188
MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77
STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR
CASE 1-07 TO-204AA (TO-3) ISSUE Z
Motorola Bipolar Power Transistor Device Data
5
2N6052
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6
Motorola Bipolar Power Transistor Device Data 2N6052/D

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